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| SFP12N60 Silicon N-Channel MOSFET Features 12A,600V, RDS(on)(Max0.65)@VGS=10V Ultra-low Gate Charge(Typical 39nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD Derating Factor above 25 TJ,Tstg TL Junction and Storage Temperature Maximum lead Temperature for soldering purposes 2.0 -55~150 300 W/ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) (Note2) (Note1) (Note3) (Note1) 7.6 48 30 880 25 4.5 250 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 600 12 Units V A Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 0.50 62.5 Units /W /W /W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. SFP12N60 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Break Voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, nC ID=1A (Note4,5) 7.5 18.5 tf toff RG=9.1 RD=31 VDD=400V, 39 56 (Note4,5) 130 100 270 210 Symbol IGSS V(BR)GSS IDSS V(BR)DSS BVDSS/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton Test Condition VGS=30V,VDS=0V IG=10 A,VDS=0V VDS=500V,VGS=0V ID=250 A,VGS=0V ID=250A,Referenced Min 30 600 - Type 0.5 0.37 15 1580 180 20 25 100 Max 100 1 4.5 0.65 Unit nA V A V V/ V S to 25 VDS=10V,ID=250 A VGS=10V,ID=6.0A VDS=50V,ID=6.0A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=12A 3 - 2055 235 25 60 210 ns pF Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=12A,VGS=0V IDR=12A,VGS=0V, dIDR / dt =100 A / s Min - Type 418 4.85 Max 12 48 1.4 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=11.2mH IAS=12A,VDD=50V,RG=25,Starting TJ=25 3.ISD12A,di/dt300A/us,VDD Steady, all for your advance SFP12N60 Fig.1 On -State Characteristics Fig.2 Transfer Characteristics Fig.3 Capacitance Variation vs Drain Voltage Fig.4 Breakdown Voltage Variation vs Temperature Fig.5 On -Resistance Variation vs Junction Temperature Fig.6 Gate charge Characteristics 3/7 Steady, all for your advance SFP12N60 Fig.7Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, all for your advance SFP12N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance SFP12N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance SFP12N60 TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance |
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